INC6008AP1 for low frequency amplify application silicon npn epitaxial type isahaya electronics corporation preliminary noticethis is not a fi nal specification some parametric are subject to change. description INC6008AP1 is a silicon npn transistor. it is designed with high voltage. feature ?small package for easy mounting. ?high voltage v ceo = 140v ?high collector current ic=1a ?low voltage vce(sat) = 0.7v(max) application relay drive, power supply outline drawing unit m aximum ratingta=25 symbol parameter rating unit v cbo collector to base voltage 160 v v ebo emitter to base voltage 5 v v ceo collector to emitter voltage 140 v i c collector current 1 a p c collector dissipation(ta=25) 500 mw t j junction temperature 150 t stg storage temperature -55150 electrical characteristicsta=25 symbol parameter test conditions limits unit min typ max v (br)cbo c to b break down voltage i c =100ai e =0ma 160 - - v v (br)ebo e to b break down voltage i e =100ai c =0ma 5 - - v v (br)ceo c to e break down voltage i c =10mar be = 140 - - v i cbo collector cut off current v cb =140vi e =0ma - - 100 na i ebo emitter cut off current v eb =4vi c =0ma - - 100 na 1 dc forward current gain1 v ce =10vi c =150ma 100 - 300 - 2 dc forward current gain2 v ce =10vi c =1a - 10 - - vce(sat) c to e saturation voltage i c =150mai b =15ma - - 0.7 v vbe(sat) b to e satu ration voltage i c =150mai b =15ma - - 1.1 v ft gain bandwidth product v ce =10vi e =-50ma 100 - - mhz cob collector output capacitance v cb =10vi e =0maf=1mhz - - 15 pf bh w type name lot h fe item marking ?O?A : ?? : ? : ?` eiaj : sc-62 jedec : 4.2 max e c b 4.6 max 1.6 2.5 3.0 1.5 0.53 ma x 0.48 max 0.8 min 1.5 0.4 ?` terminal connector eemitter ccollector bbase jedecD marking jeita:sc-62 jedec:sot-89
INC6008AP1 for low frequency amplify application silicon npn epitaxial type isahaya electronics corporation preliminary noticethis is not a fi nal specification some parametric are subject to change. typical characteristicsta=25 10 100 1000 0.01 0.1 1 10 100 1000 dc forward current gain hfe (-) collector current ic(ma) dc forward current gain vs. collector current vce=10v 0.01 0.1 1 10 100 1000 0 300 600 900 1200 1500 collector current ic(ma) base to emitter voltage vbe(v) common emitter transfer vce=10v 1 10 100 1000 10000 0.1 1 10 100 1000 collector to emittersaturation voltage vce(sat)(mv) collector current ic(ma) collector to emittersaturation voltage vs. collector current ic/ib=10 0.1 1 10 0.1 1 10 100 1000 base to emittersaturation voltage vbe(sat)(v) collector current ic(ma) base to emittersaturation voltage vs. collector curre ic/ib=10 1 10 100 1000 0.1 1 10 100 gain band width product ft(mhz) emitter current ie(ma) gain band width product vs. emitter current vce=10v 1 10 100 0.1 1 10 100 collector output capacitance cob(pf) collector to base voltage vcb(v) collector output capacitance vs. collector to base voltage f=1mhz
INC6008AP1 for low frequency amplify application silicon npn epitaxial type isahaya electronics corporation preliminary noticethis is not a fi nal specification some parametric are subject to change. 0 0.1 0.2 0.3 0.4 0.5 0.6 0 20406080100120140160 collector dissipation pc(w) ambient temperature ta() collector dissipation-ambient temperature 1 10 100 1000 0.1 1 10 emitter intput capacitance cib(pf) emitter to base voltage veb(v) emitter input capacitance vs. base to emitter voltage f=1mhz
6 - 41 tsukuba, isahaya, nagasaki, 854 - 0065 japan keep safety first in your circuit designs! isahaya electronics corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility th at trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropri ate measures such as ( 1) placement of substitutive, auxiliary, ( 2) use of non - farmable material or ( 3) prevention against any malfunct ion or mishap. notes regarding these materials these materials are intended as a reference to our customers in the selection of the isah aya products best suited to the customer?s application; they don't convey any license under any intellectual prop erty rights, or any other rights, belonging isahaya or third party. isahaya electronics corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagram s, charts or circuit application examples contained in these materials . all information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, a nd are subject to change by isahaya electronics corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact isahaya electronics corporation or an authorized isahaya products distr ibutor for the latest product information before purchasing product listed herein. isahaya electronics corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human lif e is potentially at stake. please contact isahaya electronics corporation or an authorized isahaya products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transpor tation, vehicular, medical, aerospace, nuclear, or undersea repeater use. the prior written approval of isahaya electronics corporation is necessary to reprint or reproduce in whole or in part these materials. if these products or technolo gies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to t he export control laws and regulations of japan and/or the country of destination is prohibited. please contact isahaya electronics corporation or authorized isahaya products distributor for further details on these materials or the product s contained therein. mar.2013
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